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| TS2N2222A General Purpose NPN Transistor Pin assignment: 1. Base 2. Emitter 3. Collector BVCEO = 40V Ic = 600mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Features Driver stage of AF amplifier. General purpose switching application Ordering Information Part No. TS2N2222ACX RF Packing Package 3kpcs / Reel SOT-23 Structure Epitaxial planar type. Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 380uS, Duty <= 2% Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 60V 40V 6 0.6 225 +150 - 55 to +150 Unit V V V A mW o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 100uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC / IB = 150mA / 15mA IC / IB = 500mA / 50mA VCE = 1V, IC = 0.15A VCE =10V, IC=20mA, f=100MHz VCB = 5V, f=1MHz Symbol Min 60 40 6 ----100 --- Typ ------0.20 -250 -- Max ---0.1 0.1 0.4 0.75 300 -6.5 Unit V V V uA uA V V MHz pF BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 hFE fT Cob Note : pulse test: pulse width <=380uS, duty cycle <=2% TS2N2222A 1-1 2003/12 rev. A Electrical Characteristics Curve TS2N2222A 2-2 2003/12 rev. A SOT-23 Mechanical Drawing A B F DIM A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 0.30 0.50 0.012 0.020 1.70 2.30 0.067 0.091 0.25 0.65 0.010 0.026 1.2 1.60 0.047 0.063 0.89 0.08 1.30 0.17 0.035 0.003 0.051 0.006 E G F G D C TS2N2222A 3-3 2003/12 rev. A |
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